MOSFET N-CH 60V 350MA DFN0606-3
HELAGUARD - REDUCER .50" TO .75"
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 22.2 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 380mW (Ta), 2.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DFN0606-3 (SOT8001) |
Package / Case: | 3-XFDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRF7734M2TRRochester Electronics |
MOSFET N-CH 40V 17A DIRECTFET M2 |
|
NVHL025N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
STP150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A TO220AB |
|
BS170FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 0.15MA SOT23-3 |
|
NTD110N02RGRochester Electronics |
MOSFET N-CH 24V 12.5A/110A DPAK |
|
NTMFS4C03NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 30A/136A 5DFN |
|
FQD5N60CTMRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
FDS8670Rochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
RM20N650HDRectron USA |
MOSFET N-CH 650V 20A TO263-2 |
|
FDZ191PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3A 6WLCSP |
|
FDMS8622Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 4.8A/16.5A 8QFN |
|
BSS7728NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
|
HUF76407D3STRochester Electronics |
N-CHANNEL LOGIC LEVEL ULTRAFET P |