MOSFET N-CH 60V 50A TO220SIS
Type | Description |
---|---|
Series: | U-MOSIX-H |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.4mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id: | 2.5V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs: | 28.4 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1990 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 36W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RMA4N60092Rectron USA |
MOSFET N-CHANNEL 600V 400MA TO92 |
|
FDD13AN06A0_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP50N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 50A TO220-3 |
|
RFP50N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 50A TO220-3 |
|
BSC054N04NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 17A/81A TDSON |
|
NTTFS5116PLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 5.7A 8WDFN |
|
STY139N65M5STMicroelectronics |
MOSFET N-CH 650V 130A MAX247 |
|
AOTF409Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 60V 5.4A/24A TO220FL |
|
STR2P3LLH6STMicroelectronics |
MOSFET P-CH 30V 2A SOT-23 |
|
IPW80R360P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 13A TO247-3 |
|
DMN3010LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 11A PWRDI3333 |
|
AON7538Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 23A/30A 8DFN |
|
DMT8012LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 9A/65A PWRDI5060 |