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IPW80R360P7XKSA1

IPW80R360P7XKSA1

MOSFET N-CH 800V 13A TO247-3

ACNV3130-300E

ACNV3130-300E

OPTOISO 7.5KV GATE DRVR 10DIP GW

IPW80R360P7XKSA1

IPW80R360P7XKSA1

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Part No :

IPW80R360P7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 800V 13A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10240 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPW80R360P7XKSA1 PDF
Type Description
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 500 V
FET Feature:-
Power Dissipation (Max):84W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
IPW80R360P7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW80R360P7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW80R360P7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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