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SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

MOSFET N-CH 600V 21A TO263

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

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Part No :

SIHB22N60ET1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 21A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10790 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SIHB22N60ET1-GE3 PDF
Type Description
Series:E
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1920 pF @ 100 V
FET Feature:-
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D²Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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