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IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1

MOSFET N-CH 650V 31.2A TO247-3

IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1

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Part No :

IPW65R110CFDAFKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 31.2A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10204 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPW65R110CFDAFKSA1 PDF
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 100 V
FET Feature:-
Power Dissipation (Max):277.8W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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