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IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1

MOSFET N-CH 60V 120A D2PAK

IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1

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Part No :

IPB029N06N3GE8187ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 120A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
280028 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB029N06N3GE8187ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB029N06N3GE8187ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB029N06N3GE8187ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB029N06N3GE8187ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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