SICFET N-CH 1200V 40A TO247
SMA MALE R/A TO SMPM FEMALE CABL
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 117mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id: | 4V @ 4.4mA |
Gate Charge (Qg) (Max) @ Vgs: | 106 nC @ 18 V |
Vgs (Max): | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: | 2080 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 262W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SK1667-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI3467DV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A 6TSOP |
|
IRFU9110PBFVishay / Siliconix |
MOSFET P-CH 100V 3.1A TO251AA |
|
NTK3139PT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 660MA SOT723 |
|
DMN1014UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 8A 6UDFN |
|
PSMN2R9-25YLC,115Nexperia |
MOSFET N-CH 25V 100A LFPAK56 |
|
APT12067LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 18A TO264 |
|
IPW50R199CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP3205Rochester Electronics |
MOSFET N-CH 55V 100A TO220-3 |
|
IPD60R380P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
|
CEDM7001VL TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 100MA SOT883VL |
|
MSC015SMA070SRoving Networks / Microchip Technology |
SICFET N-CH 700V 166A D3PAK |
|
CPH6311-TL-ERochester Electronics |
MOSFET P-CH 20V 5A 6CPH |