MOSFET N-CH 650V 12A TO220AB
CBL FMALE TO MALE 8POS 3.28'
Type | Description |
---|---|
Series: | MDmesh™ II |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 380mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSD13383F4TTexas Instruments |
MOSFET N-CH 12V 2.9A 3PICOSTAR |
|
IPL60R1K5C6SATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3A THIN-PAK |
|
IRF9Z10PBF-BE3Vishay / Siliconix |
MOSFET P-CH 60V 6.7A TO220AB |
|
BSS192,135Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
TK14G65W5,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A D2PAK |
|
IRFTS8342TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.2A 6TSOP |
|
TPH3205WSBQATransphorm |
GANFET N-CH 650V 35A TO247-3 |
|
IPA60R800CEXKSA1Rochester Electronics |
MOSFET N-CH 600V 5.6A TO220-FP |
|
FDPF12N50FTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.5A TO220F |
|
STD26NF10STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
|
MCH6437-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 7A SC88FL/MCPH6 |
|
NDD03N40ZT4GRochester Electronics |
MOSFET N-CH 400V 2.1A DPAK |
|
IRFR4104TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |