MOSFET N-CH 40V 90A TO262-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 95µA |
Gate Charge (Qg) (Max) @ Vgs: | 118 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9430 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 150W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STF33N60M6STMicroelectronics |
MOSFET N-CH 600V 25A TO220FP |
|
SPP12N50C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPI50R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD60R360P7SE8228AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO252-3 |
|
DMG3418L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
SIHP050N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 51A TO220AB |
|
SI3434-TPMicro Commercial Components (MCC) |
MOSFET N-CHANNEL 30V 5A SOT23 |
|
SPU02N60C3Rochester Electronics |
SPU02N60 - 600V COOLMOS N-CHANNE |
|
FDS6688ASRochester Electronics |
MOSFET N-CH 30V 14.5A 8SOIC |
|
TBB1005EMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
STL60P4LLF6STMicroelectronics |
MOSFET P-CH 40V 60A POWERFLAT |
|
TK39J60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 38.8A TO3P |
|
BUK9Y65-100E,115Nexperia |
MOSFET N-CH 100V 19A LFPAK56 |