MOSFET P-CH 40V 60A POWERFLAT
Type | Description |
---|---|
Series: | STripFET™ F6 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 34 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3525 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (5x6) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK39J60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 38.8A TO3P |
|
BUK9Y65-100E,115Nexperia |
MOSFET N-CH 100V 19A LFPAK56 |
|
NTP90N02Rochester Electronics |
MOSFET N-CH 24V 90A TO220AB |
|
TK16A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
|
FQA13N80Rochester Electronics |
MOSFET N-CH 800V 12.6A TO3PN |
|
CMLDM8120 TRCentral Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
SIHA21N60EF-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220 |
|
IRFR18N15DPBF-INFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
NTD40N03R-1GRochester Electronics |
MOSFET N-CH 25V 7.8A/32A IPAK |
|
SI4401BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 8.7A 8SO |
|
SIHH27N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A PPAK 8 X 8 |
|
IPP60R074C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 57.7A TO220-3 |
|
T2N7002BK,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 400MA SOT23-3 |