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FQI11P06TU

FQI11P06TU

MOSFET P-CH 60V 11.4A I2PAK

FQI11P06TU

FQI11P06TU

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Part No :

FQI11P06TU

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 60V 11.4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15955 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 15 - Jun 19 2024
PDF
FQI11P06TU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 53W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI11P06TU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI11P06TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI11P06TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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