MOSFET N-CH 55V 20A TO252AA
Type | Description |
---|---|
Series: | UltraFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 26mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 65 nC @ 20 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 128W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252AA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD60R1K0CEATMA1Rochester Electronics |
MOSFET N-CH 600V 4.3A TO252-3 |
|
IPN50R2K0CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 3.6A SOT223 |
|
EPC2014CEPC |
GANFET N-CH 40V 10A DIE OUTLINE |
|
TK14A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 14A TO220SIS |
|
STS5N15F3STMicroelectronics |
MOSFET N-CH 150V 5A 8SO |
|
FDD6296Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
2SK4202-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSZ130N03MSGRochester Electronics |
BSZ130N03 - 12V-300V N-CHANNEL P |
|
NTTFS5116PLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 5.7A 8WDFN |
|
IXTP26P20PWickmann / Littelfuse |
MOSFET P-CH 200V 26A TO220AB |
|
SFR9034TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK9507-30B,127Rochester Electronics |
PFET, 75A I(D), 30V, 0.009OHM, 1 |
|
TSM4N80CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 800V 4A TO220 |