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MOSFET N-CH 600V 4.3A TO252-3

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IPD60R1K0CEATMA1

IPD60R1K0CEATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD60R1K0CEATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 4.3A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
499249 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPD60R1K0CEATMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
FET Feature:-
Power Dissipation (Max):37W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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