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FQN1N60CTA

FQN1N60CTA

MOSFET N-CH 600V 300MA TO92-3

FQN1N60CTA

FQN1N60CTA

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Part No :

FQN1N60CTA

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 300MA TO92-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17222000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 31 - Jan 04 2024
PDF
FQN1N60CTA PDF
Type Description
Series:QFET®
Package:Cut Tape (CT)Tape & Box (TB)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta), 3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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