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IPB180N03S4LH0ATMA1

IPB180N03S4LH0ATMA1

MOSFET N-CH 30V 180A TO263-7-3

IPB180N03S4LH0ATMA1

IPB180N03S4LH0ATMA1

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Part No :

IPB180N03S4LH0ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 180A TO263-7-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11377 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 01 - Jan 05 2024
PDF
IPB180N03S4LH0ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:23 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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