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IRF3709PBF

IRF3709PBF

IRF3709 - 12V-300V N-CHANNEL POW

IRF3709PBF

IRF3709PBF

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Part No :

IRF3709PBF

Manufacturer
Rochester Electronics
Description
IRF3709 - 12V-300V N-CHANNEL POW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10913 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IRF3709PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.672 pF @ 16 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 120W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF3709PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3709PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3709PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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