MOSFET N-CH 1200V 29A T-MAX
Type | Description |
---|---|
Series: | POWER MOS 8™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 560mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 300 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 9670 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1135W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | T-MAX™ [B2] |
Package / Case: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI5618-TPMicro Commercial Components (MCC) |
MOSFET P-CH 60V 1.9A SOT23 |
|
DMT10H015LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI3333 |
|
MTM862270LBFPanasonic |
MOSFET N-CH 20V 2.2A WSSMINI6-F1 |
|
APT7F120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 7A D3PAK |
|
FDBL0150N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 300A 8HPSOF |
|
IPA80R450P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-3F |
|
IPT60R035CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 67A 8HSOF |
|
IPB180P04P4L02ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
IRF730APBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A TO220AB |
|
IRLL3303PBFRochester Electronics |
MOSFET N-CH 30V 4.6A SOT223 |
|
BUK764R4-60E,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
|
CSD19538Q3ATexas Instruments |
MOSFET N-CH 100V 15A 8VSON |
|
IRFRC20TRLPBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |