MOSFET P-CH 20V 1A WSSMINI6-F1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Rds On (Max) @ Id, Vgs: | 420mOhm @ 500mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 80 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 540mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | WSSMini6-F1 |
Package / Case: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BUK768R1-40E,118Nexperia |
MOSFET N-CH 40V 75A D2PAK |
![]() |
STD130N6F7STMicroelectronics |
MOSFET N-CHANNEL 60V 80A DPAK |
![]() |
IXFA22N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 22A TO263 |
![]() |
IPD30N03S2L10ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
![]() |
AON3419Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 10A 8DFN |
![]() |
TSM8N80CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 8A ITO220AB |
![]() |
IXTN22N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 22A SOT227B |
![]() |
AO7415Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 2A SC70-6 |
![]() |
STD110N8F6STMicroelectronics |
MOSFET N-CH 80V 80A DPAK |
![]() |
FDD9511L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 25A DPAK |
![]() |
FDMC7660Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 20A/40A POWER33 |
![]() |
IRFZ44STRLPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
![]() |
APT50M65JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 500V 58A ISOTOP |