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IPD30N03S2L10ATMA1

IPD30N03S2L10ATMA1

MOSFET N-CH 30V 30A TO252-3

REC3-0515DRW/H4/A/M

REC3-0515DRW/H4/A/M

DC DC CONVERTER +/-15V 3W

IPD30N03S2L10ATMA1

IPD30N03S2L10ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD30N03S2L10ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 30A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
928592 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPD30N03S2L10ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L10ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD30N03S2L10ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD30N03S2L10ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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