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FQI9N50CTU

FQI9N50CTU

MOSFET N-CH 500V 9A I2PAK

FQI9N50CTU

FQI9N50CTU

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Part No :

FQI9N50CTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 9A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
39199 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 01 - Feb 05 2025
PDF
FQI9N50CTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.03 pF @ 25 V
FET Feature:-
Power Dissipation (Max):135W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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