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SCT30N120H

SCT30N120H

SICFET N-CH 1200V 40A H2PAK-2

SCT30N120H

SCT30N120H

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Part No :

SCT30N120H

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 40A H2PAK-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11006 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 400 V
FET Feature:-
Power Dissipation (Max):270W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H2Pak-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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