MOSFET P-CH 30V 60A PPAK1212-8
Type | Description |
---|---|
Series: | TrenchFET® Gen III |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 8.55mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 46 nC @ 2.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 5860 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 52W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® 1212-8 |
Package / Case: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRF7416QTRRochester Electronics |
PFET, 10A I(D), 30V, 0.02OHM, 1O |
|
STP24NM60NSTMicroelectronics |
MOSFET N-CH 600V 17A TO220 |
|
RSR025P03TLROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
|
TPH7R006PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 60A 8SOP |
|
TK58A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 58A TO220SIS |
|
FDA28N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 28A TO3PN |
|
CSD18534KCSTexas Instruments |
MOSFET N-CH 60V 45A/100A TO220-3 |
|
IRFU1018EPBFRochester Electronics |
MOSFET N-CH 60V 56A IPAK |
|
IXTA120P065TWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO263 |
|
ZXMP3A17E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.2A SOT-23-6 |
|
IRFI720GPBFVishay / Siliconix |
MOSFET N-CH 400V 2.6A TO220-3 |
|
IRF7420TRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 11.5A 8SO |
|
AOW7S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO262 |