MOSFET P-CH 65V 120A TO263
Type | Description |
---|---|
Series: | TrenchP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 65 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 185 nC @ 10 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 13200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 298W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ZXMP3A17E6TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.2A SOT-23-6 |
|
IRFI720GPBFVishay / Siliconix |
MOSFET N-CH 400V 2.6A TO220-3 |
|
IRF7420TRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 11.5A 8SO |
|
AOW7S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO262 |
|
IRFI614GPBFVishay / Siliconix |
MOSFET N-CH 250V 2.1A TO220-3 |
|
TSM170N06CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 38A TO251 |
|
IRFP4229PBFIR (Infineon Technologies) |
MOSFET N-CH 250V 44A TO247AC |
|
2SK4097LSRochester Electronics |
MOSFET N-CH 500V 8.3A TO220FI |
|
STP13NM60NDSTMicroelectronics |
MOSFET N-CH 600V 11A TO220 |
|
NTD60N03T4Rochester Electronics |
MOSFET N-CH 28V 60A DPAK |
|
STP17NK40ZFPSTMicroelectronics |
MOSFET N-CH 400V 15A TO220FP |
|
RM2A3P60S4Rectron USA |
MOSFET P-CH 60V 2.3A SOT223-3 |
|
NTMFS4945NT3GRochester Electronics |
MOSFET N-CH 30V 7.4A/35A 5DFN |