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RQ6E060ATTCR

RQ6E060ATTCR

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Part No :

RQ6E060ATTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 30V 6A TSMT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12746 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 16 - Jun 20 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:26.4mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 15 V
FET Feature:-
Power Dissipation (Max):950mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT6 (SC-95)
Package / Case:SOT-23-6 Thin, TSOT-23-6
RQ6E060ATTCR is available at GangBo-ic.com, Please review product page below for detailed information, including RQ6E060ATTCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQ6E060ATTCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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