MOSFET N-CH 80V 39A LFPAK56
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 25.9 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 95W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQB25N33TM-F085Rochester Electronics |
MOSFET N-CH 330V 25A D2PAK |
|
IPA50R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP48N055MHE-S18-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLP3034PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 195A TO247AC |
|
IPT60R065S7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 8A 8HSOF |
|
FDC5612Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 4.3A SUPERSOT6 |
|
AUIRF7207QRochester Electronics |
MOSFET P-CH 20V 5.4A 8SO |
|
SI7111EDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 60A PPAK1212-8 |
|
AUIRF7416QTRRochester Electronics |
PFET, 10A I(D), 30V, 0.02OHM, 1O |
|
STP24NM60NSTMicroelectronics |
MOSFET N-CH 600V 17A TO220 |
|
RSR025P03TLROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
|
TPH7R006PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 60A 8SOP |
|
TK58A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 58A TO220SIS |