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RM2A8N60S4

RM2A8N60S4

MOSFET N-CH 60V 2.8A SOT223-3

RM2A8N60S4

RM2A8N60S4

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Part No :

RM2A8N60S4

Manufacturer
Rectron USA
Description
MOSFET N-CH 60V 2.8A SOT223-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
548254 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2025
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:715 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
RM2A8N60S4 is available at GangBo-ic.com, Please review product page below for detailed information, including RM2A8N60S4 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM2A8N60S4 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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