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SI4490DY-T1-GE3

SI4490DY-T1-GE3

MOSFET N-CH 200V 2.85A 8SO

1457L1201BK

1457L1201BK

BOX ALUM BLACK 5.12"L X 3.43"W

SI4490DY-T1-GE3

SI4490DY-T1-GE3

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Part No :

SI4490DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 2.85A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12082 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SI4490DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.56W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4490DY-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI4490DY-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4490DY-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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