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SIT8209AC-82-28E-133.333000X

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MEMS OSC XO 133.3330MHZ LVCMOS

SiT3373AI-2E9-28NE500.000000Y

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IPP126N10N3G

IPP126N10N3G

MOSFET N-CH 100V 58A TO220-3

638C47

638C47

TOSA

IPP126N10N3G

IPP126N10N3G

Image is for reference, please contact us to get the real picture

Part No :

IPP126N10N3G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 58A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
708170 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
Type Description
Series:OptiMOS™ 3
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:12.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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