MOSFET N-CH 650V 20A TO220FP
Type | Description |
---|---|
Series: | MDmesh™ DM2 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 35.5 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1480 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STW15NK50ZSTMicroelectronics |
MOSFET N-CH 500V 14A TO247-3 |
|
IRFS7434-7PPBFRochester Electronics |
MOSFET N-CH 40V 240A D2PAK |
|
IPB100N06S2L05ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
NTMFS5C612NLWFT1GRochester Electronics |
MOSFET N-CH 60V 235A 5DFN |
|
IPP50R380CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO220-3 |
|
AOSS32338CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 4A SOT23-3 |
|
NTGS3433T1GRochester Electronics |
MOSFET P-CH 12V 2.35A 6TSOP |
|
TSM2314CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 4.9A SOT23 |
|
HUF75842P3Rochester Electronics |
MOSFET N-CH 150V 43A TO220-3 |
|
PSMN022-30BL,118Nexperia |
MOSFET N-CH 30V 30A D2PAK |
|
NVMFS5C604NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 287A 5DFN |
|
IPN60R360P7SATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 600V 9A SOT223 |
|
TK22A10N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 22A TO220SIS |