CAP CER 8200PF 16V C0G/NP0 1206
MOSFET P-CH 30V 4.5A VS-6
Type | Description |
---|---|
Series: | U-MOSVI |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 56mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 510 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | VS-6 (2.9x2.8) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDB8442Rochester Electronics |
MOSFET N-CH 40V 28A/80A TO263AB |
|
NTF2955T1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
NVMFS5C468NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
IAUC100N04S6L025ATMA1IR (Infineon Technologies) |
IAUC100N04S6L025ATMA1 |
|
2SJ387L-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
AON6572Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 36A/85A 8DFN |
|
IXTT1N300P3HVWickmann / Littelfuse |
MOSFET N-CH 3000V 1A TO268 |
|
AON7404Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 20A/40A 8DFN |
|
SPI07N65C3XKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD95N02R-1GRochester Electronics |
MOSFET N-CH 24V 12A IPAK |
|
IXTA20N65XWickmann / Littelfuse |
MOSFET N-CH 650V 20A TO263 |
|
FCP190N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20.2A TO220-3 |
|
NVMFS5C468NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 37A 5DFN |