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IAUC100N04S6L025ATMA1

IAUC100N04S6L025ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IAUC100N04S6L025ATMA1

Manufacturer
IR (Infineon Technologies)
Description
IAUC100N04S6L025ATMA1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.56mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 24µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2019 pF @ 25 V
FET Feature:-
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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