MOSFET N-CH 800V 1.4A TO220-3
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6.5Ohm @ 840mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 530 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AON4407Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 12V 9A 8DFN |
|
STD26P3LLH6STMicroelectronics |
MOSFET P-CH 30V 12A DPAK |
|
NX7002AKVLNexperia |
MOSFET N-CH 60V 190MA TO236AB |
|
IXFT14N80PWickmann / Littelfuse |
MOSFET N-CH 800V 14A TO268 |
|
FDZ206PRochester Electronics |
MOSFET P-CH 20V 13A 30BGA |
|
SPU07N60S5Rochester Electronics |
MOSFET N-CH 600V 7.3A TO251-3 |
|
IRFR9010TRLPBFVishay / Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
|
RF4G060ATTCRROHM Semiconductor |
PCH -40V -6A POWER, DFN2020, MOS |
|
SSM3K337R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 38V 2A SOT23F |
|
SI4920DYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TPC6110(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 4.5A VS-6 |
|
FDB8442Rochester Electronics |
MOSFET N-CH 40V 28A/80A TO263AB |
|
NTF2955T1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |