MOSFET N-CH 700V 4A TO251-3
RS30-1602O6O6TDAEHHXX.X.
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 700 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 70µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 163 pF @ 100 V |
FET Feature: | Super Junction |
Power Dissipation (Max): | 42W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STB28NM60NDSTMicroelectronics |
MOSFET N-CH 600V 23A D2PAK |
|
IRFR110TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
2SK3234-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM45N600T7Rectron USA |
MOSFET N-CH 600V 44.5A TO247 |
|
NP40N055KLE-E1-AYRochester Electronics |
MOSFET N-CH 55V 40A TO263 |
|
CSD18511KCSTexas Instruments |
MOSFET N-CH 40V 194A TO220-3 |
|
SIR698DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 7.5A PPAK SO-8 |
|
IRLR8103VPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SPP04N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV45EN2215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMT3006LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI5060 |
|
SI4838DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 17A 8SO |
|
STL25N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 16A PWRFLAT HV |