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IPS70R2K0CEAKMA1

IPS70R2K0CEAKMA1

MOSFET N-CH 700V 4A TO251-3

HNT000314

HNT000314

RS30-1602O6O6TDAEHHXX.X.

IPS70R2K0CEAKMA1

IPS70R2K0CEAKMA1

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Part No :

IPS70R2K0CEAKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 700V 4A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11603 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPS70R2K0CEAKMA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:163 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
IPS70R2K0CEAKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPS70R2K0CEAKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPS70R2K0CEAKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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