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IPP60R190P6XKSA1

IPP60R190P6XKSA1

MOSFET N-CH 600V 20.2A TO220-3

IPP60R190P6XKSA1

IPP60R190P6XKSA1

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Part No :

IPP60R190P6XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 20.2A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19403 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPP60R190P6XKSA1 PDF
Type Description
Series:CoolMOS™ P6
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 100 V
FET Feature:-
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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