MOSFET N-CH 600V 8.1A TO220-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 8.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 520mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs: | 23.4 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 512 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 66W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB80N06S2LH5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI3445DVRochester Electronics |
P-CHANNEL MOSFET |
|
2N7002PS/ZL115Rochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
BSZ088N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/40A 8TSDSON |
|
SQ2337ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 80V 2.2A SOT23-3 |
|
IRFR024PBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IPC90N04S53R6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A 8TDSON-34 |
|
SI7108DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8 |
|
STFH24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
|
DMT6008LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13A PWRDI3333 |
|
PSMN8R0-30LYC115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVC3S5A51PLZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 3CPH |
|
SI4186DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 35.8A 8SO |