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MOCB-24-N-50A

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SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

MOSFET P-CH 80V 2.2A SOT23-3

SQ2337ES-T1_GE3

SQ2337ES-T1_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQ2337ES-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 80V 2.2A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16432 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
SQ2337ES-T1_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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