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NVH4L080N120SC1

NVH4L080N120SC1

TRANS SJT N-CH 1200V 29A TO247-4

NVH4L080N120SC1

NVH4L080N120SC1

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Part No :

NVH4L080N120SC1

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS SJT N-CH 1200V 29A TO247-4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11875 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170mW (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
NVH4L080N120SC1 is available at GangBo-ic.com, Please review product page below for detailed information, including NVH4L080N120SC1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVH4L080N120SC1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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