TVS DIODE 214V 344V DO214AC
TVS DIODE 300V 486V DO214AC
SWITCH SNAP ACTION SPDT 5A 125V
MOSFET N-CH 600V 1.9A DPAK
Type | Description |
---|---|
Series: | QFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.7Ohm @ 950mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 235 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 44W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PSMN1R6-30MLHXNexperia |
MOSFET N-CH 30V 160A LFPAK33 |
|
BUK7Y2R0-40HXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
RJ1G12BGNTLLROHM Semiconductor |
MOSFET N-CH 40V 120A LPTL |
|
PMV28UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NTD4910NT4GRochester Electronics |
MOSFET N-CH 30V 8.2A/37A DPAK |
|
GKI10526Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 4A 8DFN |
|
IPA60R160P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23.8A TO220-FP |
|
IRF9540NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO220AB |
|
NX138BKWXNexperia |
MOSFET N-CH 60V 210MA SOT323 |
|
DMN2450UFD-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 900MA 3DFN |
|
IRFIZ24NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 14A TO220AB FP |
|
IPI126N10N3 GRochester Electronics |
MOSFET N-CH 100V 58A TO262-3 |
|
IRFR5505TRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |