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IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

MOSFET N-CH 100V 50A TO252-3

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IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

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Part No :

IPD50N10S3L16ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 50A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
947494 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD50N10S3L16ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4180 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N10S3L16ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD50N10S3L16ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD50N10S3L16ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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