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IRFB23N20DPBF

IRFB23N20DPBF

SMPS HEXFET POWER MOSFET

IRFB23N20DPBF

IRFB23N20DPBF

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Part No :

IRFB23N20DPBF

Manufacturer
Rochester Electronics
Description
SMPS HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10756 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFB23N20DPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.96 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 170W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB23N20DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB23N20DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB23N20DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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