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SPP10N10

SPP10N10

MOSFET N-CH 100V 10.3A TO220-3

SPP10N10

SPP10N10

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Part No :

SPP10N10

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 10.3A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
317431 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SPP10N10 PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:426 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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