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FDFMA2P029Z

FDFMA2P029Z

MOSFET P-CH 20V 3.1A 6MICROFET

FDFMA2P029Z

FDFMA2P029Z

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Part No :

FDFMA2P029Z

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 20V 3.1A 6MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
292342000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FDFMA2P029Z PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:95mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.4W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-VDFN Exposed Pad
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