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STB33N60DM6

STB33N60DM6

MOSFET N-CH 600V 25A D2PAK

STB33N60DM6

STB33N60DM6

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Part No :

STB33N60DM6

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 25A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10984 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:MDmesh™ M6
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:128mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB33N60DM6 is available at GangBo-ic.com, Please review product page below for detailed information, including STB33N60DM6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB33N60DM6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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