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IPW60R120C7XKSA1

IPW60R120C7XKSA1

MOSFET N-CH 600V 19A TO247-3

Q-2P05A00032.5M

Q-2P05A00032.5M

SMA-RJB/FKRAZ-SP G174 2.5M

IPW60R120C7XKSA1

IPW60R120C7XKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPW60R120C7XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 19A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15520 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPW60R120C7XKSA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 400 V
FET Feature:-
Power Dissipation (Max):92W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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