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SPW11N60CFDFKSA1

SPW11N60CFDFKSA1

POWER FIELD-EFFECT TRANSISTOR, 1

SPW11N60CFDFKSA1

SPW11N60CFDFKSA1

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Part No :

SPW11N60CFDFKSA1

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15280 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
SPW11N60CFDFKSA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.2 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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