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RS1E350GNTB

RS1E350GNTB

MOSFET N-CH 30V 35A/80A 8HSOP

RS1E350GNTB

RS1E350GNTB

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Part No :

RS1E350GNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 35A/80A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12044 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4060 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
RS1E350GNTB is available at GangBo-ic.com, Please review product page below for detailed information, including RS1E350GNTB price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RS1E350GNTB to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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