MOSFET N-CH 500V 5A DPAK
Type | Description |
---|---|
Series: | MDmesh™ II |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 790mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 570 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HUFA75344P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
APT75M50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 75A T-MAX |
|
2SJ545-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPP80R900P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO220-3 |
|
STD7NM80-1STMicroelectronics |
MOSFET N-CH 800V 6.5A IPAK |
|
FDPF085N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 40A TO220F |
|
MVMBF0201NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 300MA SOT-23-3 |
|
AOT4S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220 |
|
DMT3006LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI3333 |
|
NVTFS4C25NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.1A/22.1A 8DFN |
|
SIS126DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 12A/45.1A PPAK |
|
IPP45P03P4L11AKSA1Rochester Electronics |
MOSFET P-CH 30V 45A TO220-3 |
|
FQPF5N15Rochester Electronics |
MOSFET N-CH 150V 4.2A TO220F |