Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP80R900P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO220-3 |
|
STD7NM80-1STMicroelectronics |
MOSFET N-CH 800V 6.5A IPAK |
|
FDPF085N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 40A TO220F |
|
MVMBF0201NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 300MA SOT-23-3 |
|
AOT4S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220 |
|
DMT3006LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V PWRDI3333 |
|
NVTFS4C25NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.1A/22.1A 8DFN |
|
SIS126DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 12A/45.1A PPAK |
|
IPP45P03P4L11AKSA1Rochester Electronics |
MOSFET P-CH 30V 45A TO220-3 |
|
FQPF5N15Rochester Electronics |
MOSFET N-CH 150V 4.2A TO220F |
|
SIRA12DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 25A PPAK SO-8 |
|
BSH103,235Nexperia |
MOSFET N-CH 30V 850MA TO236AB |
|
BSP135L6433Rochester Electronics |
N-CHANNEL POWER MOSFET |