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BSB165N15NZ3GXUMA1

BSB165N15NZ3GXUMA1

MOSFET N-CH 150V 9A/45A 2WDSON

BSB165N15NZ3GXUMA1

BSB165N15NZ3GXUMA1

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Part No :

BSB165N15NZ3GXUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 9A/45A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12744 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
BSB165N15NZ3GXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 75 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
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