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FDMS86350ET80

FDMS86350ET80

MOSFET N-CH 80V 25A/198A POWER56

FDMS86350ET80

FDMS86350ET80

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Part No :

FDMS86350ET80

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 25A/198A POWER56
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17215 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FDMS86350ET80 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8030 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.3W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
FDMS86350ET80 is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS86350ET80 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS86350ET80 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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